BB301M Datasheet, PDF (3/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB301M
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS
6
Gate 1 to source breakdown
voltage
V_(BR)G1SS +6
Gate 2 to source breakdown
voltage
V_(BR)G2SS ±6
Gate 1 to source cutoff current I_G1SS
—
Gate 2 to source cutoff current I_G2SS
—
Gate 1 to source cutoff voltage V_G1S(off) 0.4
Gate 2 to source cutoff voltage V_G2S(off) 0.4
Drain current
I _D(op)
10
Forward transfer admittance |y_fs|
15
Input capacitance
Ciss
2.2
Output capacitance
Coss 0.9
Reverse transfer capacitance Crss
—
Power gain
PG
22
Noise figure
NF
—
Note: Marking is “AW–”.
Typ Max Unit
—
—
V
—
—
V
—
—
V
—
+100 nA
—
±100 nA
—
1.0 V
—
1.0 V
15
20
mA
20
—
mS
3.0
4.0
pF
1.2
1.6
pF
0.018 0.04 pF
26
—
dB
1.3
1.9
dB
Test conditions
I_D = 200 µA
V_G1S = V_G2S = 0
I_G1 = +10 µA
V_G2S = V_DS = 0
I_G2 = ±10 µA
V_G1S = V_DS = 0
V_G1S = +5 V
V_G2S = V_DS = 0
V_G2S = ±5 V
V_G1S = V_DS = 0
V_DS = 5 V, V_G2S = 4 V
I_D = 100 µA
V_DS = 5 V, V_G1S = 5 V
I_D = 100 µA
V_DS = 5 V, V_G1 = 5 V
V_G2S = 4 V, R_G = 100 kΩ
V_DS = 5 V, V_G1 = 5 V
V_G2S = 4 V
R_G = 100 kΩ, f = 1 kHz
V_DS = 5 V, V_G1 = 5 V
V_G2S = 4 V, R_G = 100 kΩ
f = 1 MHz
V_DS = 5 V, V_G1 = 5 V
V_G2S = 4 V
R_G = 100 kΩ, f = 200 MHz
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