BB301M Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB301M
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Symbol
V_DS
V_G1S
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
V_G2S
I_D
Pch
Tch
Tstg
Ratings
Unit
6
V
+6
V
–0
±6
V
25
mA
150
mW
150
°C
–55 to +150
°C
2