BB301M Datasheet, PDF(4/10 Page) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

BB301M Datasheet, PDF (4/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

◁

BB301M

Main Characteristics

Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG)

VG2

Gate 2

VG1

Gate 1

Drain

Source

Application Circuit

VAGC = 4 to 0.3 V

BBFET

V DS = 5 V

Output

Input

V GG = 5 V

▷