2SK1297 Datasheet, PDF (6/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1297
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0 ^{D = 1}
0.5
0.3 _0.2
0.1
0.1 _0.05
0.02
0.03 _{10.S0h1ot Pulse}
0.01
10 µ
100 µ
T_C = 25°C
1m
10 m
Pulse Width PW (s)
θch–c (t) = γs (t) • θch–c
θch–c = 1.25°C/W, T_C = 25°C
P_DM
PW
T
D = ^PTW
100 m
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T
Vout Monitor
R_L
Vin = 10 V
50 Ω
V_DD =^.. 30 V
Wavewforms
90 %
Vin 10 %
Vout ^{10 %}
10 %
td _(on)
90 %
90 %
tr
td _(off)
tf
6