2SK1297 Datasheet, PDF (5/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1297
Dynamic Input Characteristics
100
20
80
16
V_DD = 10 V
25 V
60
50 V
12
V_DS
40
50 V
V_GS
8
20
4
25 V
I_D = 40 A
V_DD = 10 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
1000
500
Switching Characteristics
t_{d (off)}
t_f
200
100
t_r
50
20
10
0.5
t_{d (on)}
V_GS = 10 V
V_DD
=•
•
30
V
PW = 2µs, duty < 1 %
1.0 2
5 10 20 50
Drain Current I_D (A)
Reverse Drain Current vs.
Source to Drain Voltage
100
Pulse Test
80
60
10 V 5 V
40
20
V_GS = 0, – 5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
5