2SK1297 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1297
Absolute Maximum Ratings (Ta = 25GC)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW d 10 Ps, duty cycle d 1%
q 2. Value at T_C = 25 C
Symbol
V_DSS
V_GSS
I_D
I *¹
D(pulse)
I_DR
Pch*²
Tch
Tstg
Ratings
Unit
60
V
r20
V
40
A
160
A
40
A
100
W
150
qC
–55 to +150
qC
2