2SK1297 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1297
Silicon N-Channel MOS FET
Application
High speed power switching
Features
x Low on-resistance
x High speed switching
x Low drive current
x 4 V gate drive device
 Can be driven from 5 V source
x Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
November 1996
TO-3P
D
G
1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source