2SK1297 Datasheet, PDF(3/7 Page) Hitachi Semiconductor

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2SK1297 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

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2SK1297

Electrical Characteristics (Ta = 25GC)

Item

Symbol Min

Drain to source breakdown

voltage

Gate to source breakdown

voltage

V(BR)DSS

V(BR)GSS

r20

Gate to source leak current IGSS

Zero gate voltage drain current IDSS

Gate to source cutoff voltage VGS(off) 1.0

Static drain to source on state RDS(on) â

resistance

Forward transfer admittance |yfs|

Input capacitance

Ciss â

Output capacitance

Coss â

Reverse transfer capacitance Crss â

Turn-on delay time

td(on)

Rise time

Turn-off delay time

td(off)

Fall time

Body to drain diode forward VDF

voltage

Body to drain diode reverse trr

recovery time

Note 1. Pulse test

Typ Max Unit

r10 PA

250 PA

2.0 V

: 0.015 0.018

0.02

3600

1850

450

170

700

350

1.2

0.025 :

155 â

Test conditions

ID = 10 mA, VGS = 0

r P IG = 100 A, VDS = 0

r VGS = 16 V, VDS = 0

VDS = 50 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 20 A, VGS = 10 V *1

ID = 20 A, VGS = 4 V *1

ID = 20 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 20 A, VGS = 10 V,

: RL = 1.5

IF = 40 A, VGS = 0

P IF = 40 A, VGS = 0,

diF/dt = 50 A/ s

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