HN27C4000G Datasheet, PDF (14/20 Pages) Hitachi Semiconductor – 524288-Word ®8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM

HN27C4000G Series
DC Characteristics (V_CC = 6.25 V ± 0.25 V, V_PP =12.5 V ± 0.3 V, Ta=25°C ± 5°C)
Item
Symbol
Min
Typ
Max Unit Test conditions
Input leakage current
V_PP supply current
Operating V_CC current
Input voltage
I_LI
—
—
2
µA
Vin = 6.5 V/0.45 V
I_PP
—
—
40
mA
CE = V_IL
I_CC
—
—
50
mA
V_IL
–0.1^*5 —
0.8
V
V_IH
2.2
—
V_CC
V
+ 0.5^*6
Output voltage
V_OL
—
—
0.45 V
I_OL = 2.1 mA
V_OH
2.4
—
—
V
I_OH = –400 µA
Notes: 1. V_CC must be applied simultaneously or before V_PP and removed simultaneously or after V_PP.
2. V_PP must not exceed 13 V including overshoot.
3. An influence may be had upon device reliability if the device is installed or removed while V_PP =
12.5 V.
4. Do not alter V_PP either V_IL to 12.5 V or 12.5 V to V_IL when CE = low.
5. V_IL min = –0.6 V for pulse width ≤ 20 ns.
6. If V_IH is over the specified maximum value, programming operation cannot be guaranteed.
AC Characteristics (V_CC = 6.25 V ± 0.25 V, V_PP = 12.5 V ± 0.3 V, Ta = 25°C ± 5°C)
Test Conditions
• Input pulse levels: 0.45 to 2.4 V
• Input rise and fall times: ≤ 20 ns
• Reference levels for measuring timings: 0.8 V, 2.0 V
Item
Symbol
Min
Typ
Max Unit Test conditions
Address setup time
OE setup time
Data setup time
Address hold time
Data hold time
OE to output float delay
t_AS
t_OES
t_DS
t_AH
t_DH
t_DF*1
2
—
—
µs
2
—
—
µs
2
—
—
µs
0
—
—
µs
2
—
—
µs
0
—
130
ns
V_PP setup time
V_CC setup time
CE initial programming
pulse width
t_VPS
t_VCS
t_PW
2
—
—
µs
2
—
—
µs
47.5 50.0 52.5 µs
Data valid from OE
t_OE
0
—
150
ns
Note: 1. t_DF is defined as the time at which the output achieves the open circuit condition and data is no
longer driven.
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