GS8182T08 Datasheet, PDF (18/36 Pages) GSI Technology – 18Mb SigmaDDR-II™ Burst of 2 SRAM

GS8182T08/09/18/36BD-400/375/333/300/250/200/167
Operating Currents
-400
-375
-333
-300
-250
-200
-167
Parameter
Symbol
Test Conditions
0 –40 0 –40 0 –40 0 –40 0 –40 0 –40 0 –40
to to to to to to to to to to to to to to
70°C 85°C 70°C 85°C 70°C 85°C 70°C 85°C 70°C 85°C 70°C 85°C 70°C 85°C
Notes
Operating Current
(x36): DDR
I_DD
V_DD = Max, I_OUT = 0 mA 765 775 725 735 550 560 505 515 440 450 370 380 330 340
Cycle Time ≥ t_KHKH Min _{mA mA mA mA mA mA mA mA mA mA mA mA mA mA}
2, 3
Operating Current
(x18): DDR
I_DD
V_DD = Max, I_OUT = 0 mA 605 615 570 580 435 445 405 415 350 360 300 310 265 275
Cycle Time ≥ t_KHKH Min _{mA mA mA mA mA mA mA mA mA mA mA mA mA mA}
2, 3
Operating Current
(x9): DDR
I_DD
V_DD = Max, I_OUT = 0 mA 605 615 570 580 435 445 405 415 350 360 300 310 265 275
Cycle Time ≥ t_KHKH Min _{mA mA mA mA mA mA mA mA mA mA mA mA mA mA}
2, 3
Operating Current
(x8): DDR
I_DD
V_DD = Max, I_OUT = 0 mA 605 615 570 580 435 445 405 415 350 360 300 310 265 275
Cycle Time ≥ t_KHKH Min _{mA mA mA mA mA mA mA mA mA mA mA mA mA mA}
2, 3
Standby Current
(NOP): DDR
I_SB1
Device deselected,
I^OUT = 0 mA, f = Max,
All Inputs ≤ 0.2 V or
200 210 195 205 170 180 165 175 155 165 140 150 135 145
mA mA mA mA mA mA mA mA mA mA mA mA mA mA
2, 4
≥ V_DD – 0.2 V
Notes:
1. Power measured with output pins floating.
2. Minimum cycle, I_OUT = 0 mA
3. Operating current is calculated with 50% read cycles and 50% write cycles.
4. Standby Current is only after all pending read and write burst operations are completed.
Rev: 1.04c 11/2011
18/36
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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