GS8182T08 Datasheet, PDF (17/36 Pages) GSI Technology – 18Mb SigmaDDR-II™ Burst of 2 SRAM

GS8182T08/09/18/36BD-400/375/333/300/250/200/167
Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Parameter
Symbol
Min.
Output High Voltage
V_OH1
V_DDQ/2
Output Low Voltage
V_OL1
Vss
Output High Voltage
V_OH2
V_DDQ – 0.2
Output Low Voltage
V_OL2
Vss
Notes:
1. I_OH = (V_DDQ/2) / (RQ/5) +/– 15% @ V_OH = V_DDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
2. I_OL = (V_DDQ/2) / (RQ/5) +/– 15% @ V_OL = V_DDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
3. Parameter tested with RQ = 250Ω and V_DDQ = 1.5 V or 1.8 V
4. 0Ω ≤ RQ ≤ ∞Ω
5. I_OH = –1.0 mA
6. I_OL = 1.0 mA
Max.
V_DDQ
V_DDQ/2
V_DDQ
0.2
Units
V
V
V
V
Notes
1, 3
2, 3
4, 5
4, 6
Rev: 1.04c 11/2011
17/36
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2007, GSI Technology