GS8182T08 Datasheet, PDF (14/36 Pages) GSI Technology – 18Mb SigmaDDR-II™ Burst of 2 SRAM

GS8182T08/09/18/36BD-400/375/333/300/250/200/167
Absolute Maximum Ratings
(All voltages reference to V_SS)
Symbol
Description
Value
Unit
V_DD
Voltage on V_DD Pins
–0.5 to 2.9
V
V_DDQ
Voltage in V_DDQ Pins
–0.5 to V_DD
V
V_REF
Voltage in V_REF Pins
–0.5 to V_DDQ
V
V_I/O
Voltage on I/O Pins
–0.5 to V_DDQ +0.5 (≤ 2.9 V max.)
V
V_IN
Voltage on Other Input Pins
–0.5 to V_DDQ +0.5 (≤ 2.9 V max.)
V
I_IN
Input Current on Any Pin
+/–100
mA dc
I_OUT
Output Current on Any I/O Pin
+/–100
mA dc
T_J
Maximum Junction Temperature
125
o_C
T_STG
Storage Temperature
–55 to 125
o_C
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
Recommended Operating Conditions
Power Supplies
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
V_DD
1.7
1.8
1.9
V
I/O Supply Voltage
V_DDQ
1.4
—
1.9
V
Reference Voltage
V_REF
0.68
—
0.95
V
Notes:
1. Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 1.4 V ≤ V_DDQ ≤ 1.6 V (i.e., 1.5 V I/O)
and 1.7 V ≤ V_DDQ ≤ 1.9 V (i.e., 1.8 V I/O) and quoted at whichever condition is worst case.
2. The power supplies need to be powered up simultaneously or in the following sequence: V_DD, V_DDQ, V_REF, followed by signal inputs. The
power down sequence must be the reverse. V_DDQ must not exceed V_DD.
Operating Temperature
Parameter
Ambient Temperature
(Commercial Range Versions)
Ambient Temperature
(Industrial Range Versions)
Symbol
T_A
T_A
Min.
Typ.
Max.
Unit
0
25
70
°C
–40
25
85
°C
Rev: 1.04c 11/2011
14/36
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2007, GSI Technology