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GS8171DW36AC Datasheet, PDF (18/33 Pages) GSI Technology – 18Mb Σ1x1Dp HSTL I/O Double Late Write SigmaRAM
GS8171DW36/72AC-350/333/300/250
Input and Output Leakage Characteristics
Parameter
Input Leakage Current
(except mode pins)
ZQ, MCH, MCL, EP2, EP3
Pin Input Current
Symbol
IIL
IINM
Output Leakage Current
IOL
Test Conditions
VIN = 0 to VDDQ
VIN = 0 to VDDQ
Output Disable,
VOUT = 0 to VDDQ
Min.
–2 uA
–50 uA
–2 uA
Max Notes
2 uA
—
50 uA
—
2 uA
—
Operating Currents
Parameter
Symbol
x72
Operating
Current
x36
x72
Chip Disable
Current
x36
x72
Bank Deselect
Current
x36
IDDP (PL)
IDDP (PL)
ISB1 (PL)
ISB1 (PL)
ISB2 (PL)
ISB2 (PL)
CMOS
Deselect
IDD3
Current
-350
-333
-300
-250
0°C –40°C 0°C –40°C 0°C –40°C 0°C –40°C Test Conditions
to
to
to
to
to
to
to
to
70°C +85°C 70°C +85°C 70°C +85°C 70°C +85°C
365 mA
265 mA
375 mA
275 mA
345 mA
245 mA
355 mA
255 mA
320 mA
225 mA
330 mA
235 mA
275 mA
200 mA
285 mA
210 mA
E1 ≤ VIL Max.
tKHKH ≥ tKHKH Min.
All other inputs
VIL ≥ VIN ≥ VIH
80 mA
75 mA
90 mA
85 mA
75 mA
70 mA
85 mA
80 mA
70 mA
65 mA
80 mA
75 mA
65 mA
60 mA
75 mA
70 mA
E1 ≥ VIH Min. or
tKHKH ≥ tKHKH Min.
All other inputs
VIL ≥ VIN ≥ VIH
80 mA
75 mA
90 mA
85 mA
75 mA
70 mA
85 mA
80 mA
70 mA
65 mA
80 mA
75 mA
65 mA
60 mA
75 mA
70 mA
E2 or E3 False
tKHKH ≥ tKHKH Min.
All other inputs
VIL ≥ VIN ≥ VIH
45 mA 55 mA 45 mA 55 mA 45 mA 55 mA 45 mA 55 mA
Device Deselected
All inputs
VSS + 0.10 V
≥ VIN ≥
VDD – 0.10 V
Rev: 1.04 4/2005
18/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology