GS8171DW36AC Datasheet, PDF(17/33 Page) GSI Technology – 18Mb Σ1x1Dp HSTL I/O Double Late Write SigmaRAM

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GS8171DW36AC Datasheet, PDF (17/33 Pages) GSI Technology – 18Mb Σ1x1Dp HSTL I/O Double Late Write SigmaRAM

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GS8171DW36/72AC-350/333/300/250

Undershoot Measurement and Timing

VIH

VSS

50%

VSS â 1.0 V

20% tKC

Capacitance

(TA = 25oC, f = 1 MHZ, VDD = 1.8 V)

Parameter

Symbol

Input Capacitance

Output Capacitance

Note:

This parameter is sample tested.

CIN

COUT

Overshoot Measurement and Timing

VDD + 1.0 V

50%

20% tKC

VDD

VIL

Test conditions

VIN = 0 V

VOUT = 0 V

Typ. Max. Unit

AC Test Conditions

Parameter

Input high level

Input low level

Max. input slew rate

Input reference level

Output reference level

AC Test Load Diagram

Conditions

VDDQ

2 V/ns

VDDQ/2

ZQ = High (CMOS I/O)

50â¦

VT = VDDQ/2

Rev: 1.04 4/2005

17/33

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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