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GS8160EV18AT Datasheet, PDF (15/24 Pages) GSI Technology – 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs | |||
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DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
ZZ Input Current
FTInput Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Preliminary
GS8160EV18/32/36AT-350/333/300/250/225/200/150
Symbol
IIL
IIN1
IIN2
IOL
VOH
VOL
Test Conditions
VIN = 0 to VDD
VDD ⥠VIN ⥠VIH
0 V ⤠VIN ⤠VIH
VDD ⥠VIN ⥠VIL
0 V ⤠VIN ⤠VIL
Output Disable, VOUT = 0 to VDD
IOH = â4 mA, VDDQ = 1.6 V
IOL = 4 mA, VDD = 1.6 V
Min
Max
â1 uA
1 uA
â1 uA
â1 uA
â100 uA
â1 uA
â1 uA
VDDQ â 0.4 V
â
1 uA
100 uA
1 uA
1 uA
1 uA
â
0.4 V
Rev: 1.00a 6/2003
15/24
© 2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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