GS8160EV18AT Datasheet, PDF (12/24 Pages) GSI Technology – 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

Preliminary
GS8160EV18/32/36AT-350/333/300/250/225/200/150
Absolute Maximum Ratings
(All voltages reference to V_SS)
Symbol
Description
Value
Unit
V_DD
Voltage on V_DD Pins
–0.5 to 3.6
V
V_DDQ
V_I/O
V_IN
Voltage in V_DDQ Pins
Voltage on I/O Pins
Voltage on Other Input Pins
–0.5 to 3.6
V
–0.5 to V_DDQ +0.5 (≤ 3.6 V max.)
V
–0.5 to V_DD +0.5 (≤ 3.6 V max.)
V
I_IN
Input Current on Any Pin
+/–20
mA
I_OUT
Output Current on Any I/O Pin
+/–20
mA
P_D
Package Power Dissipation
1.5
W
T_STG
Storage Temperature
–55 to 125
o_C
T_BIAS
Temperature Under Bias
–55 to 125
o_C
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Rev: 1.00a 6/2003
12/24
© 2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.