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GS82032AT Datasheet, PDF (12/22 Pages) GSI Technology – 64K x 32 2Mb Synchronous Burst SRAM
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
ZZ Input Current
Mode Pin Input Current
Output Leakage Current
Output High Voltage
Output High Voltage
Output Low Voltage
Symbol
IIL
IINZZ
IINM
IOL
VOH
VOH
VOL
GS82032AT-180/166/150/133/100/66/4/5/6
Test Conditions
VIN = 0 to VDD
VDD ≥ VIN ≥ VIH
0V ≤ VIN ≤ VIH
VDD ≥ VIN ≥ VIL
0V ≤ VIN ≤ VIL
Output Disable,
VOUT = 0 to VDD
IOH = –4 mA, VDDQ = 2.375 V
IOH = –4 mA, VDDQ = 3.135 V
IOL = 4 mA
Min
–1 uA
–1 uA
–1 uA
–300 uA
–1 uA
–1 uA
1.7 V
2.4 V
Max
1 uA
1 uA
300 uA
1 uA
1 uA
1 uA
0.4 V
Rev: 1.12 10/2004
12/22
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2000, GSI Technology