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MB85R1001_09 Datasheet, PDF (5/12 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 1 M Bit (128 K × 8) | |||
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MB85R1001
â ELECTRICAL CHARACTERISTICS
1. DC CHARACTERISTICS
Parameter
Symbol
Condition
(within recommended operating conditions)
Value
Unit
Min
Typ
Max
Input Leakage Current
|ILI| VIN = 0 V to VCC
â¯
â¯
10
μA
Output Leakage Current
|ILO|
VOUT = 0 V to VCC,
CE1 = VIH or OE = VIH
â¯
â¯
10
μA
Operating Power Supply
Current
ICC
CE1 = 0.2 V, CE2 = VCCâ0.2 V,
Iout = 0 mA*1
â¯
10
15
mA
CE1 ⥠VCCâ0.2 V
Standby Current
ISB CE2 ⤠0.2 V*2
â¯
10
50
μA
OE ⥠VCCâ0.2 V, WE ⥠VCCâ0.2 V*2
Output Voltage (high)
VOH IOH = â2.0 mA
VCC à 0.8 â¯
â¯
V
Output Voltage (low)
VOL IOL = 2.0 mA
â¯
â¯
0.4
V
*1 : During the measurement of ICC, the Address, Data In were taken to only change once per active cycle.
Iout: output current
*2 : All pins other than setting pins should be input at the CMOS level voltages such as H ⥠VCC â 0.2 V, L ⤠0.2 V.
DS05-13103-7E
5
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