MB85R1001_09 Datasheet, PDF (1/12 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 1 M Bit (128 K × 8)

FUJITSU MICROELECTRONICS
DATA SHEET
Memory FRAM
CMOS
1 M Bit (128 K × 8)
DS05-13103-7E
MB85R1001
■ DESCRIPTIONS
The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits
of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
The MB85R1001 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R1001 can be used for 10¹⁰ read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E²PROM.
The MB85R1001 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
■ FEATURES
• Bit configuration
: 131,072 words × 8bits
• Read/write endurance
: 10¹⁰ times/bit
• Operating power supply voltage : 3.0 V to 3.6 V
• Operating temperature range : − 40 °C to + 85 °C
• Data retention
: 10 years ( + 55 °C)
• Package
: 48-pin plastic TSOP (1)
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2009.8