MB85R1001_09 Datasheet, PDF (4/12 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 1 M Bit (128 K × 8)

MB85R1001
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Symbol
Unit
Min
Max
Supply Voltage*
Input Voltage*
Output Voltage*
Ambient Operating Temperature
Storage Temperature
VCC
VIN
VOUT
TA
Tstg
− 0.5
− 0.5
− 0.5
− 40
− 40
+ 4.0
V
VCC + 0.5
V
VCC + 0.5
V
+ 85
°C
+ 125
°C
* : All voltages are referenced to GND.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage*
Input Voltage (high)*
Input Voltage (low)*
Operating Temperature
Symbol
VCC
VIH
VIL
TA
Min
3.0
VCC × 0.8
− 0.5
− 40
Value
Typ
3.3
⎯
⎯
⎯
Max
3.6
VCC + 0.5
+ 0.8
+ 85
Unit
V
V
V
°C
* : All voltages are referenced to GND.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
4
DS05-13103-7E