MB82DP02183D Datasheet, PDF (2/33 Pages) Fujitsu Component Limited. – 32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory

MB82DP02183D-65L
■ PRODUCT LINEUP
Parameter
Access Time (Max) (tCE, tAA)
Active Current (Max) (IDDA1)
Standby Current (Max) (IDDS1)
Power Down Current (Max) (IDDPS)
MB82DP02183D-65L
65 ns
30 mA
100 µA
10 µA
■ PIN DESCRIPTION
Pin Name
Description
A20 to A0
Address Input
CE1
Chip Enable 1 (Low Active)
CE2
Chip Enable 2 (High Active)
WE
Write Enable (Low Active)
OE
Output Enable (Low Active)
LB
Lower Byte Control (Low Active)
UB
Upper Byte Control (Low Active)
DQ7 to DQ0
Lower Byte Data Input/Output
DQ15 to DQ8
Upper Byte Data Input/Output
VDD
Power Supply
VSS
Ground
Note : Refer to “■ PACKAGE FOR ENGINEERING SAMPLES” for additional pin descriptions of FBGA package
supply.
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