MB82DP02183D Datasheet, PDF (1/33 Pages) Fujitsu Component Limited. – 32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-11436-1E
MEMORY Mobile FCRAM^TM
CMOS
32M Bit (2 M word × 16 bit)
Mobile Phone Application Specific Memory
MB82DP02183D-65L
■ DESCRIPTION
CMOS 2,097,152-WORD x 16 BIT
Fast Cycle Random Access Memory
with Low Power SRAM Interface
The Fujitsu MB82DP02183D is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous
Static Random Access Memory (SRAM) interface containing 33,554,432 storages accessible in a 16-bit format.
MB82DP02183D is utilized using a Fujitsu advanced FCRAM core technology and improved integration in com-
parison to regular SRAM.
This MB82DP02183D is suited for mobile applications such as Cellular Handset and PDA.
*: FCRAM is a trademark of Fujitsu Limited, Japan
■ FEATURES
• Asynchronous SRAM Interface
• Fast Access Cycle Time
: tAA = tCE = 65 ns Max
• 8 words Page Access Capability : tPAA = 20 ns Max
• Low Voltage Operating Condition : VDD = + 2.6 V to + 3.5 V
• Wide Operating Temperature : TA = − 30 °C to + 85 °C
TJ = − 30 °C to + 90 °C
• Byte Control by LB and UB
• Low Power Consumption
: IDDA1 = 30 mA Max
IDDS1 = 100 µA Max
• Various Power Down mode
: Sleep
4M-bit Partial
8M-bit Partial
• Shipping Form
: Wafer/Chip
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