MB85RS16NPNF-G Datasheet, PDF (17/36 Pages) Fujitsu Component Limited. – 16 K (2 K × 8) Bit SPI

MB85RS16N
■ POWER ON/OFF SEQUENCE
tpd
tf
VDD
2.7 V
VIH (Min)
tr
tpu
VDD
2.7 V
VIH (Min)
1.0 V
VIL (Max)
1.0 V
VIL (Max)
GND
CS
CS >VDD × 0.8 ^*
* : CS (Max) < VDD + 0.3 V
CS : don't care
CS >VDD × 0.8 ^*
CS
GND
Parameter
CS level hold time at power OFF
CS level hold time at power ON
Power supply falling time
Symbol
tpd
tpu
tf
Value
Min
Max
400
⎯
0.1
⎯
100
⎯
Unit
ns
ms
μs/V
Power supply rising time
tr
30
⎯
μs/V
If the device does not operate within the specified conditions of read cycle, write cycle or power on/off
sequence, memory data can not be guaranteed.
■ FRAM CHARACTERISTICS
Item
Read/Write Endurance*¹
Data Retention*²
Min
10¹⁰
10¹²
10
95
≥ 200
Max
Unit
Parameter
⎯
Operation Ambient Temperature TA = + 95 °C
Times/byte
⎯
Operation Ambient Temperature TA = + 85 °C
⎯
Operation Ambient Temperature TA = + 95 °C
⎯
Years Operation Ambient Temperature TA = + 55 °C
⎯
Operation Ambient Temperature TA = + 35 °C
*1 : Total number of reading and writing defines the minimum value of endurance, as an FRAM memory operates
with destructive readout mechanism.
*2 : Minimum values define retention time of the first reading/writing data right after shipment, and these values
are calculated by qualification results.
■ NOTE ON USE
We recommend programming of the device after reflow. Data written before reflow cannot be guaranteed.
DS501-00030-3v0-E
17