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MB85RS16NPNF-G Datasheet, PDF (13/36 Pages) Fujitsu Component Limited. – 16 K (2 K × 8) Bit SPI | |||
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MB85RS16N
â ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions)
Parameter
Symbol
Condition
Value
Unit
Min
Typ
Max
0 V ⤠CS < VDD
â¯
â¯
200
Input leakage current
|ILI| CS = VDD
â¯
â¯
10
μA
WP, HOLD, SCK,
SI = 0 V to VDD
â¯
â¯
10
Output leakage current
|ILO| SO = 0 V to VDD
â¯
â¯
10
μA
Operating power supply current
SCK = 10 MHz
IDD
SCK = 20 MHz
â¯
0.75
â¯
mA
â¯
1.5
2.4
mA
Standby current
ISB SCK = SI = CS = VDD
â¯
5@25 °C
15@85 °C
20@95 °C
μA
Input high voltage
VIH VDD = 2.7 V to 3.6 V VDD Ã 0.8
â¯
VDD + 0.3 V
Input low voltage
VIL VDD = 2.7 V to 3.6 V
â 0.5
â¯
VDD Ã 0.2 V
Output high voltage
VOH IOH = â2 mA
VDD â 0.5
â¯
VDD
V
Output low voltage
VOL IOL = 2 mA
VSS
â¯
0.4
V
Pull up resistance for CS
RP
â¯
18
33
80
kΩ
DS501-00030-3v0-E
13
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