MRF8P20140WHR3 Datasheet, PDF (9/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

V_DD = 28 Vdc, I_DQA = 500 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Output Power
f
(MHz)
1880
Z_source
(Ω)
5.35 -- j5.03
Z_load ⁽¹⁾
(Ω)
2.36 -- j4.84
(dBm)
49.7
P1dB
(W)
93
η_D (%)
53.7
(dBm)
50.5
1930 7.39 -- j5.10 2.57 -- j4.73
50.0
100
56.9
50.8
1990 9.46 -- j1.71 2.48 -- j5.11
50.0
100
56.4
50.7
2025 9.30 + j0.80 2.50 -- j5.30
50.0
100
56.7
50.7
(1) Load impedance for optimum P1dB power.
Z_source = Impedance as measured from gate contact to ground.
Z_load = Impedance as measured from drain contact to ground.
P3dB
(W)
113
119
118
118
η_D (%)
56.2
59.3
58.6
59.1
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
Z _source
Z _load
Figure 15. Carrier Side Load Pull Performance — Maximum P1dB Tuning
V_DD = 28 Vdc, I_DQA = 500 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
f
(MHz)
1880
Z_source
(Ω)
5.35 -- j5.03
Z_load ⁽¹⁾
(Ω)
6.91 -- j4.37
(dBm)
47.6
P1dB
(W)
57
η_D (%)
64.6
(dBm)
48.2
P3dB
(W)
67
1930 7.39 -- j5.10 6.36 -- j3.60
48.0
63
67.3
48.6
72
1990 9.46 -- j1.71 5.61 -- j3.11
48.0
63
67.2
48.6
72
2025 9.30 + j0.80 5.28 -- j2.88
47.9
61
66.5
48.5
70
(1) Load impedance for optimum P1dB efficiency.
Z_source = Impedance as measured from gate contact to ground.
Z_load = Impedance as measured from drain contact to ground.
η_D (%)
65.2
68.3
67.8
67.3
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
Z _source
Z _load
Figure 16. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
RF Device Data
Freescale Semiconductor
MRF8P20140WHR3 MRF8P20140WHSR3
9