MRF8P20140WHR3 Datasheet, PDF (1/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
Document Number: MRF8P20140WH
Rev. 0, 4/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: V_DD = 28 Volts,
I_DQA = 500 mA, V_GSB = 1.2 Vdc, P_out = 24 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Frequency
G_ps
(dB)
η_D
Output PAR ACPR
(%)
(dB)
(dBc)
1880 MHz
16.0
42.8
8.0
--31.0
1920 MHz
16.0
43.7
8.1
--32.6
2025 MHz
15.9
42.0
8.1
--31.2
• Capable of Handling 10:1 VSWR, @ 30 Vdc, 1920 MHz, 160 Watts CW ⁽¹⁾
Output Power (3 dB Input Overdrive from Rated P_out)
• Typical P_out @ 3 dB Compression Point ≃ 170 Watts ^(1,2)
Features
• Designed for Wide Instantaneous Bandwidth Applications. VBW_res ≃ 240 MHz.
• Designed for Wideband Applications that Require 160 MHz Signal Bandwidth
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 14.
• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 14.
MRF8P20140WHR3
MRF8P20140WHSR3
1880--2025 MHz, 24 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465M--01, STYLE 1
NI--780--4
MRF8P20140WHR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P20140WHSR3
RF_inA/V_GSA 3
RF_inB/V_GSB 4
1 RF_outA/V_DSA
2 RF_outB/V_DSB
(Top View)
Table 1. Maximum Ratings
Figure 1. Pin Connections
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ⁽³⁾
CW Operation @ T_C = 25°C
Derate above 25°C
Rating
Symbol
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
125
225
140
0.66
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. P3dB = P_avg + 7.0 dB where P_avg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
3. Continuous use at maximum temperature will affect MTTF.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8P20140WHR3 MRF8P20140WHSR3
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