MRF8P20140WHR3 Datasheet, PDF(3/15 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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MRF8P20140WHR3 Datasheet, PDF (3/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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Table 4. Electrical Characteristics (TA = 25Â°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc,

1880--2025 MHz Bandwidth

Pout @ 1 dB Compression Point, CW

Pout @ 3 dB Compression Point (2)

P1dB

P3dB

140

170 (3)

IMD Symmetry @ 24 W PEP, Pout where IMD Third Order

Intermodulation ï 30 dBc

IMDsym

133

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

MHz

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

240

MHz

Gain Flatness in 145 MHz Bandwidth @ Pout = 24 W Avg.

Gain Variation over Temperature

(--30Â°C to +85Â°C)

0.25

âG

0.013

dB/Â°C

Output Power Variation over Temperature

(--30Â°C to +85Â°C) (3)

âP1dB

0.003

dB/Â°C

1. Measurement made with device in a Symmetrical Doherty configuration.

2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

RF Device Data

Freescale Semiconductor

MRF8P20140WHR3 MRF8P20140WHSR3

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