MRF8P20140WHR3 Datasheet, PDF (2/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 24 W CW, 28 Vdc, I_DQA = 500 mA, V_GSB = 1.2 Vdc, 1920 MHz
Case Temperature 96°C, 130 W CW⁽²⁾, 28 Vdc, I_DQA = 500 mA, V_GSB = 1.2 Vdc, 1920 MHz
Symbol
R_θJC
Value ⁽¹⁾
0.68
0.40
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics ⁽³⁾
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
5
μAdc
Gate--Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
μAdc
On Characteristics ^(3,4)
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 200 μAdc)
V_GS(th)
1.1
1.8
2.6
Vdc
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_DA = 500 mAdc)
V_GSA(Q)
—
2.6
—
Vdc
Fixture Gate Quiescent Voltage ⁽⁵⁾
(V_DD = 28 Vdc, I_DA = 500 mAdc, Measured in Functional Test)
V_GGA(Q)
4.5
5.2
6.0
Vdc
Drain--Source On--Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
V_DS(on)
0.1
0.2
0.3
Vdc
Functional Tests ^(4,6,7) (In Freescale Doherty Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQA = 500 mA, V_GSB = 1.2 Vdc,
P_out = 24 W Avg., f1 = 1880 MHz, f2 = 1910 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Drain Efficiency
G_ps
15.0
η_D
37.5
16.0
41.2
18.0
dB
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
7.3
7.7
—
dB
Adjacent Channel Power Ratio
ACPR
—
--31.9
--29.5
dBc
Typical Broadband Performance ⁽⁷⁾ — (In Freescale Doherty Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQA = 500 mA, V_GSB = 1.2 Vdc,
P_out = 24 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
G_ps
(dB)
η_D
Output PAR
ACPR
(%)
(dB)
(dBc)
1880 MHz
16.0
42.8
8.0
--31.0
1920 MHz
16.0
43.7
8.1
--32.6
2025 MHz
15.9
42.0
8.1
--31.2
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
3. Each side of device measured separately.
4. V_DDA and V_DDB must be tied together and powered by a single DC power supply.
5. V_GG = 2.0 x V_GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
6. Part internally matched both on input and output.
7. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
MRF8P20140WHR3 MRF8P20140WHSR3
2
RF Device Data
Freescale Semiconductor