MRF8P20140WHR3 Datasheet, PDF (6/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
17
44
16.8
42
16.6
η_{D 40}
16.4
V_DD = 28 Vdc, P_out = 24 W (Avg.), I_DQA = 500 mA
V_GSB = 1.2 Vdc, 2--Carrier W--CDMA, 3.84 MHz Channel
38
16.2 Bandwidth, 30 MHz Carrier Spacing, Input Signal
36
16 ^{PAR = 9.8 dB @ 0.01% Probability on CCDF}
--30
--1
--25
15.8
G_{ps --31}
--1.2
--26
PARC
15.6
--32
--1.4
--27
IM3
15.4
--33
--1.6
--28
15.2
ACPR
--34
--1.8
--29
15
--35
--2
--30
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 4. 2--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ P_out = 24 Watts Avg.
17
43
16.8
16.6
V_DD = 28 Vdc, P_out = 24 W (Avg.), I_DQA = 500 mA
42
η_{D 41}
16.4 V_GSB = 1.2 Vdc, 2--Carrier W--CDMA, 3.84 MHz
40
16.2
Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
39
16
G_ps ^--30
--1.6
15.8
ACPR
--31
--1.7
15.6
--32
--1.8
15.4
PARC
15.2
--33
--1.9
--34
--2
15
--35
--2.1
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 5. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ P_out = 24 Watts Avg.
--20
V_DD = 28 Vdc, P_out = 24 W (PEP)
I_DQA = 500 mA, V_GSB = 1.2 Vdc
--30
IM3--U
IM3--L
--40
IM5--L
IM5--U
--50
IM7--U
--60
Two--Tone Measurements
IM7--L
(f1 + f2)/2 = Center Frequency of 1920 MHz
--70
1
10
100
300
TWO--TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Two--Tone Spacing
MRF8P20140WHR3 MRF8P20140WHSR3
6
RF Device Data
Freescale Semiconductor