MRF8P20140WHR3 Datasheet, PDF (7/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
16.5
1
60
--22
V_DD = 28 Vdc, I_DQA = 500 mA, V_GSB = 1.2 Vdc, f = 1920 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
16
0
50
--24
η_D
15.5
--1
15
--2
--1 dB = 14.5 W
40
--26
G_ps
30
--28
ACPR
14.5
--3 --2 dB = 25 W
20
--30
14
--4
--3 dB = 35 W
PARC
10
--32
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
13.5
--5
0
--34
10
20
30
40
50
60
P_out, OUTPUT POWER (WATTS)
Figure 7. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
20
60
0
V_DD = 28 Vdc, I_DQA = 500 mA
1880 MHz
η_D
18 ^{VGSB = 1.2 Vdc, Single--Carrier W--CDMA}
50
--10
G_ps
16
2025 MHz
1920 MHz
2025 MHz
40
--20
1880 MHz
14
1920 MHz
ACPR
30
--30
1880 MHz
12
20
--40
2025 MHz 1920 MHz
10
10
--50
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
8
0
--60
1
10
100 200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 8. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
20
--10
V_DD = 28 Vdc, I_DQA = 500 mA, V_GSB = 1.2 Vdc, f1 = 1880 MHz
f2 = 1910 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel
18 _Bandwidth
--20
16 ^Gps
--30
IM5--L
14
IM3--U
IM3--L
IM5--U
--40
12
IM7--U
--50
IM7--L
10
Input Signal PAR = 9.8 dB @
0.01% Probability on CCDF
8
1
10
--60
--70
100 200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. 2--Carrier W--CDMA Power Gain, IM3, IM5, IM7
versus Output Power
18
15
12
9
V_DD = 28 Vdc
6
P_in = 0 dBm
I_DQA = 500 mA
V_GSB = 1.2 Vdc
3
0
1650 1725 1800 1875 1950 2025 2100 2175 2250
f, FREQUENCY (MHz)
Figure 10. Broadband Frequency Response
RF Device Data
Freescale Semiconductor
MRF8P20140WHR3 MRF8P20140WHSR3
7