MRF7S27130HR3_08 Datasheet, PDF (9/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 5 Ω
f = 2700 MHz
Z_source
f = 2500 MHz
f = 2700 MHz
Z_load
f = 2500 MHz
V_DD = 28 Vdc, I_DQ = 1500 mA, P_out = 23 W Avg.
f
MHz
Z_source
W
Z_load
W
2500
4.499 - j2.335 2.936 - j4.876
2525
4.382 - j1.944 2.885 - j4.666
2550
4.294 - j1.567
2.838 - j4.467
2575
4.234 - j1.194
2.797 - j4.273
2600
4.209 - j0.820
2.763 - j4.084
2625
4.219 - j0.447
2.733 - j3.903
2650
4.248 - j0.090
2.706 - j3.732
2675
4.304 + j0.261
2.678 - j3.570
2700
4.390 + j0.612
2.652 - j3.410
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
RF Device Data
Freescale Semiconductor
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF7S27130HR3 MRF7S27130HSR3
9