MRF7S27130HR3_08 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 348 μAdc)
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 1500 mAdc)
Fixture Gate Quiescent Voltage ⁽¹⁾
(V_DD = 28 Vdc, I_D = 1500 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 3.4 Adc)
Dynamic Characteristics ⁽²⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Input Capacitance
(V_DS = 28 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
V_GS(th)
1.2
2
2.7
Vdc
V_GS(Q)
—
2.7
—
Vdc
V_GG(Q)
4
5.4
7
Vdc
V_DS(on)
0.1
0.24
0.3
Vdc
C_rss
—
10.4
—
pF
C_oss
—
711
—
pF
C_iss
—
326
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1500 mA, P_out = 23 W Avg., f = 2500 MHz and f =
2700 MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM ³/₄, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset.
Power Gain
G_ps
15
16.5
18.5
dB
Drain Efficiency
η_D
18
20
23
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR
7.5
8.2
—
dB
Adjacent Channel Power Ratio
ACPR
—
- 49
- 46
dBc
Input Return Loss
IRL
—
-8
-5
dB
1. V_GG = 2 x V_GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S27130HR3 MRF7S27130HSR3
2
RF Device Data
Freescale Semiconductor