MRF7S27130HR3_08 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
18
25
17.9
V_DD = 28 Vdc, P_out = 23 W (Avg.), I_DQ = 1500 mA
802.16d, 64 QAM ³/_4, 4 Bursts, 7 MHz Channel Bandwidth
24
17.8 Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF ²³
17.7
22
η_D
17.6
21
17.5
20
−5
17.4
G_ps
17.3
IRL
17.2
−46
−6
−47
−7
−48
−8
17.1
−49
−9
ACPR
17
−50
−10
2500 2525 2550 2575 2600 2625 2650 2675 2700
f, FREQUENCY (MHz)
Figure 3. WiMAX Broadband Performance @ P_out = 23 Watts Avg.
17.7
33
17.6
V_DD = 28 Vdc, P_out = 43 W (Avg.), I_DQ = 1500 mA
802.16d, 64 QAM ³/_4, 4 Bursts, 7 MHz Channel Bandwidth
32
17.5 Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 31
17.4
30
η_D
17.3
29
17.2
28
−5
17.1
G_ps
−36
−6
17
−37
−7
IRL
16.9
−38
−8
16.8
−39
−9
ACPR
16.7
−40
−10
2500 2525 2550 2575 2600 2625 2650 2675 2700
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance @ P_out = 43 Watts Avg.
19
I_DQ = 2250 mA
18 2000 mA
1500 mA
17
1200 mA
16
1000 mA
15
V_DD = 28 Vdc, I_DQ = 1500 mA
f1 = 2595 MHz, f2 = 2605 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
14
1
10
100
500
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
V_DD = 28 Vdc, I_DQ = 1500 mA
f1 = 2595 MHz, f2 = 2605 MHz
−20 _{Two−Tone Measurements, 10 MHz Tone Spacing}
−30
1000 mA
I_DQ = 2250 mA
−40
−50
−60
1
1200 mA
1500 mA
10
2000 mA
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S27130HR3 MRF7S27130HSR3
6
RF Device Data
Freescale Semiconductor