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MRF7S27130HR3_08 Datasheet, PDF (8/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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TYPICAL CHARACTERISTICS
109
108
107
106
105
90
110 130 150 170
190 210
230 250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 23 W Avg., and ηD = 20%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
WiMAX TEST SIGNAL
100
10
Input Signal
1
0.1
0.01
0.001
0.0001
802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz
Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability
on CCDF
0
2
4
6
8
10
PEAKâTOâAVERAGE (dB)
Figure 13. OFDM 802.16d Test Signal
â10
â20
10 MHz
Channel BW
â30
â40
â50
â60
â70
â80
â90
â20
ACPR in 1 MHz
Integrated BW
â15 â10 â5
ACPR in 1 MHz
Integrated BW
0
5 10 15 20
f, FREQUENCY (MHz)
Figure 14. WiMAX Spectrum Mask Specifications
MRF7S27130HR3 MRF7S27130HSR3
8
RF Device Data
Freescale Semiconductor
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