MRF7S27130HR3_08 Datasheet, PDF(3/12 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF7S27130HR3_08 Datasheet, PDF (3/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Table 4. Electrical Characteristics (TC = 25Â°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 23 W Avg.,

f = 2500 MHz and f = 2700 MHz, WiMAX Signal, OFDM Single - Carrier, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @

0.01% Probability on CCDF.

Mask System Type G @ Pout = 23 W Avg.

Mask

dBc

Point B at 3.5 MHz Offset

- 27

Point C at 5 MHz Offset

- 40

Point D at 7.4 MHz Offset

- 44

Point E at 14 MHz Offset

- 60

Point F at 17.5 MHz Offset

- 60

Relative Constellation Error @ Pout = 23 W Avg. (1)

RCE

- 33

Error Vector Magnitude (1)

EVM

2.2

% rms

(Typical EVM Performance @ Pout = 23 W Avg. with OFDM 802.16d

Signal Call)

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, 2500 - 2700 MHz Bandwidth

Video Bandwidth @ 105 W PEP Pout where IM3 = - 30 dBc

(Tone Spacing from 100 kHz to VBW)

VBW

ÎIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both

sidebands)

MHz

Gain Flatness in 200 MHz Bandwidth @ Pout = 23 W Avg.

Average Deviation from Linear Phase in 200 MHz Bandwidth

@ Pout = 105 W CW

Average Group Delay @ Pout = 105 W CW, f = 2600 MHz

Part - to - Part Insertion Phase Variation @ Pout = 105 W CW,

f = 2600 MHz, Six Sigma Window

1.2

Î¦

135

Â°

Delay

1.5

ÎÎ¦

81.3

Â°

Gain Variation over Temperature

( - 30Â°C to +85Â°C)

ÎG

0.013

dB/Â°C

Output Power Variation over Temperature

( - 30Â°C to +85Â°C)

ÎP1dB

0.01

dBm/Â°C

1. RCE = 20Log(EVM/100)

RF Device Data

Freescale Semiconductor

MRF7S27130HR3 MRF7S27130HSR3

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