MRF7S27130HR3_08 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
−20
V_DD = 28 Vdc, I_DQ = 1500 mA
f1 = 2595 MHz, f2 = 2605 MHz
−30 _{Two−Tone Measurements, 10 MHz Tone Spacing}
−40
3rd Order
−50
5th Order
−60
−70
7th Order
−80
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
V_DD = 28 Vdc, P_out = 105 W (PEP), I_DQ = 1500 mA
−10 ^{Two−Tone Measurements}
(f1 + f2)/2 = Center Frequency of 2600 MHz
−20
−30 _IM3−U
−40 ^IM3−L
IM5−U
−50
IM7−U
−60
1
IM7−L
IM5−L
10
100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
55
50
V_DD = 28 Vdc, I_DQ = 1500 mA
f = 2600 MHz, 802.16d, 64 QAM ³/₄
45 4 Bursts, 7 MHz Channel
40 ^{Bandwidth, Input Signal PAR = 9.5 dB}
@ 0.01% Probability on CCDF
35
30
−10
−30_C _{25_C −15}
85_C −20
85_C _−25
25_C ^−30
−30_C
−35
25
20 ^Gps
15
−40
T_C = −30_C ^−45
−50
10 _ηD
5
0
1
ACPR
10
25_C −55
85_C
−60
−65
100
300
P_out, OUTPUT POWER (WATTS) AVG. WiMAX
Figure 9. WiMAX, ACPR, Power Gain and Drain
Efficiency versus Output Power
19
T_C = −30_C
18
17
G_ps
16
25_C
85_C
60
−30_C _{25_C 50}
85_C
40
30
15
20
14
η_D
13
1
V_DD = 28 Vdc
I_DQ = 1500 mA
f = 2600 MHz
10
100
10
0
300
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
18
I_DQ = 1500 mA
f = 2600 MHz
17
16
15
32 V
14
V_DD = 24 V
28 V
13
0 25 50 75 100 125 150 175 200
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor
MRF7S27130HR3 MRF7S27130HSR3
7