MRF7S19120NR1_09 Datasheet, PDF (9/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

f = 2040 MHz
Z_load
f = 1880 MHz
f = 2040 MHz
Z_source
f = 1880 MHz
Z_o = 5 Ω
V_DD = 28 Vdc, I_DQ = 1200 mA, P_out = 36 W Avg.
f
MHz
Z_source
W
Z_load
W
1880
2.195 - j2.157
2.091 - j0.905
1900
2.122 - j2.019
2.012 - j0.712
1920
2.054 - j1.880
1.957 - j0.515
1940
1.979 - j1.747
1.912 - j0.312
1960
1.922 - j1.623
1.887 - j0.089
1980
1.858 - j1.500
1.848 + j0.121
2000
1.793 - j1.380
1.819 + j0.327
2020
1.717 - j1.255
1.789 + j0.540
2040
1.645 - j1.112
1.761 + j0.756
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 16. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF7S19120NR1
9