MRF7S19120NR1_09 Datasheet, PDF (1/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single-Carrier W-CDMA Performance: V_DD = 28 Volts, I_DQ =
1200 mA, P_out = 36 Watts Avg., Full Frequency Band, IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF.
ąPower Gain — 18 dB
ąDrain Efficiency — 32%
ąDevice Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ąACPR @ 5 MHz Offset — -38.5 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 120 Watts CW
Output Power
• P_out @ 1 dB Compression Point w 120 W CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF7S19120N
Rev. 2, 12/2009
MRF7S19120NR1
1930-1990 MHz, 36 W AVG., 28 V
SINGLE W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 1730-02
TO-270 WBL-4
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DSS
-0.5, +65
Vdc
V_GS
-6.0, +10
Vdc
V_DD
32, +0
Vdc
T_stg
-ā65 to +150
°C
T_C
150
°C
T_J
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 120 W CW
Case Temperature 80°C, 36 W CW
R_θJC
0.43
0.51
°C/W
ăĂ1. Continuous use at maximum temperature will affect MTTF.
Ăă2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Ăă3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007, 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S19120NR1
1