MRF7S19120NR1_09 Datasheet, PDF (6/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
18.4
36
18.3
35
G_ps
18.2
34
18.1
η_D
33
18
32
V_DD = 28 Vdc, P_out = 36 W (Avg.), I_DQ = 1200 mA
17.9
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth
-0.5
0
17.8
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
-1
-4
17.7
PARC
-1.5
-8
17.6
-2
-12
17.5
IRL
-2.5
-16
17.4
-3
-20
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ P_out = 36 Watts Avg.
17.6
17.4 ^ηD
17.2
45
G_ps
44
43
17
42
16.8
41
16.6
V_DD = 28 Vdc, P_out = 59 W (Avg.), I_DQ = 1200 mA
-2
0
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth
16.4 _{Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF}
-2.5
-4
16.2
PARC
16
-3
-8
-3.5
-12
15.8
IRL
-4
-16
15.6
-4.5
-20
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 4. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ P_out = 59 Watts Avg.
19
18 1500 mA
1200 mA
17
900 mA
16
I_DQ = 1800 mA
-1 0
V_DD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
-2 0
-3 0
I_DQ = 600 mA
900 mA
-4 0
350 mA
15 _{600 mA}
V_DD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
14
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two-T one Power Gain versus
Output Power
1200 mA
1500 mA
-5 0
-60
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S19120NR1
6
RF Device Data
Freescale Semiconductor