MRF7S19120NR1_09 Datasheet, PDF (8/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
19
10⁸
I_DQ = 1200 mA
18
f = 1960 MHz
17
10⁷
16
15
10⁶
14
28 V
V_DD = 24 V
32 V
13
0
40
80
120
160
200
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
10⁵
90
110 130
150 170
190 210
230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 36 W Avg., and η_D = 32%.
MTTF calculator available at http://www.freescale.com/rf. Select
Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
W-CDMA TEST SIGNAL
100
10
1
Input Signal
0.1
0.01
W-CDMA. ACPR Measured in 3.84 MHz
0.001 ^{Channel Bandwidth @ ±5 MHz Offset.}
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.0001
0 1 2 3 4 5 6 7 8 9 10
PEAK-T O-A VERAGE (dB)
Figure 14. CCDF W-CDMA IQ Magnitude
Clipping, Single-Carrier Test Signal
10
0
-10
3.84 MHz
-20
Channel BW
-30
-40
-50
-60 -ACPR in 3.84 MHz
Integrated BW
-70
+ACPR in 3.84 MHz
Integrated BW
-80
-90
-100
-9 -7.2 -5.4 -3.6 -1.8
0 1.8 3.6 5.4 7.2 9
f, FREQUENCY (MHz)
Figure 15. Single-Carrier W-CDMA Spectrum
MRF7S19120NR1
8
RF Device Data
Freescale Semiconductor