MRF7S19120NR1_09 Datasheet, PDF (2/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
2 (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate-Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 270 μAdc)
Gate Quiescent Voltage
(V_DD = 28 Vdc, I_D = 1200 mAdc, Measured in Functional Test)
Drain-Source On-Voltage
(V_GS = 10 Vdc, I_D = 2.7 Adc)
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Input Capacitance
(V_DS = 28 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
V_GS(th)
1.2
2
2.7
Vdc
V_GS(Q)
2
2.7
3.5
Vdc
V_DS(on)
0.15
0.275
0.35
Vdc
C_rss
—
1.65
—
pF
C_oss
—
600
—
pF
C_iss
—
1.03
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1200 mA, P_out = 36 W Avg., f = 1930 MHz and f =
1990 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
G_ps
16.5
18
19.5
dB
Drain Efficiency
η_D
30
32
36
%
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR
5.7
6.1
—
dB
Adjacent Channel Power Ratio
ACPR
—
-38.5
-35.5
dBc
Input Return Loss
IRL
—
-10
-7
dB
ăĂ1. Part internally matched both on input and output.
(continued)
MRF7S19120NR1
2
RF Device Data
Freescale Semiconductor