MRF7S19100NR1 Datasheet, PDF (9/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 5 Ω
f = 2040 MHz
f = 2040 MHz
Z_source
f = 1880 MHz
Z_load
f = 1880 MHz
V_DD = 28 Vdc, I_DQ = 1000 mA, P_out = 29 W Avg.
f
MHz
Z_source
W
Z_load
W
1880
4.257 - j2.758
2.143 - j3.408
1900
4.388 - j2.617
2.038 - j3.236
1920
4.521 - j2.560
1.944 - j3.066
1940
4.568 - j2.630
1.858 - j2.898
1960
4.424 - j2.758
1.775 - j2.725
1980
4.124 - j2.800
1.708 - j2.550
2000
3.819 - j2.611
1.643 - j2.387
2020
3.567 - j2.292
1.572 - j2.223
2040
3.525 - j1.844
1.487 - j2.029
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
RF Device Data
Freescale Semiconductor
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF7S19100NR1 MRF7S19100NBR1
9