MRF7S19100NR1 Datasheet, PDF (7/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
−10
V_DD = 28 Vdc, I_DQ = 1000 mA
−20 ^{f1 = 1955 MHz, f2 = 1965 MHz}
Two−Tone Measurements, 10 MHz Tone Spacing
−30
−40
3rd Order
−50
5th Order
−60
7th Order
−70
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
V_DD = 28 Vdc, P_out = 100 W (PEP), I_DQ = 1000 mA
−10 ^{Two−Tone Measurements}
(f1 + f2)/2 = Center Frequency of 1960 MHz
−20
−30
−40
IM7−U
−50
IM7−L
IM3−U
IM3−L
IM5−U
IM5−L
−60
1
10
100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
1
50
Ideal
0
45
−1
40
−1 dB = 25 W
−2
35
−2 dB = 35 W
−3
−4
−5
20
−3 dB = 47 W
30
Actual
V_DD = 28 Vdc, I_DQ = 1000 mA
25
f = 1960 MHz, Input PAR = 7.5 dB
20
30
40
50
60
P_out, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
20
T_C = −30_C
19
G_ps
25_C
18
17
85_C
60
−30_C
25_C
50
85_C
40
30
16
20
15
η_D
14
1
V_DD = 28 Vdc
I_DQ = 1000 mA
f = 1960 MHz
10
100
10
0
300
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
RF Device Data
Freescale Semiconductor
MRF7S19100NR1 MRF7S19100NBR1
7