MRF7S19100NR1 Datasheet, PDF (10/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
62
60
P6dB = 52.12 dBm (162.60 W)
58
P3dB = 51.61 dBm (144.90 W)
56
54
P1dB = 50.39 dBm
(109.50 W)
52
Ideal
Actual
50
V_DD = 28 Vdc, I_DQ = 1000 mA
48
Pulsed CW, 12 μsec(on),
10% Duty Cycle, f = 1960 MHz
46
30 32 34 36 38 40 42 44 46
P_in, INPUT POWER (dBm)
NOTE: Measured in a Peak Tuned Load Pull Fixture
Test Impedances per Compression Level
Z_source
Ω
Z_load
Ω
P3dB
4.39 - j5.66
1.81 - j3.27
62
60
P6dB = 52.81 dBm (190.80 W)
Ideal
58
P3dB = 52.20 dBm (165.90 W)
56
54 ^{P1dB = 50.94 dBm}
(124.20 W)
52
Actual
50
V_DD = 32 Vdc, I_DQ = 1000 mA
48
Pulsed CW, 12 μsec(on),
10% Duty Cycle, f = 1960 MHz
46
30 32 34 36 38 40 42 44 46
P_in, INPUT POWER (dBm)
NOTE: Measured in a Peak Tuned Load Pull Fixture
Test Impedances per Compression Level
Z_source
Ω
Z_load
Ω
P3dB
4.39 - j5.66
1.81 - j3.27
Figure 16. Pulsed CW Output Power
versus Input Power
Figure 17. Pulsed CW Output Power
versus Input Power
MRF7S19100NR1 MRF7S19100NBR1
10
RF Device Data
Freescale Semiconductor