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MRF7S19100NR1 Datasheet, PDF (8/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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TYPICAL CHARACTERISTICS
19
108
IDQ = 1000 mA
f = 1960 MHz
18
107
17
16
VDD = 32 V
15
28 V
24 V
14
0
40
80
120
160
200
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
106
105
90
110 130
150 170
190 210 230 250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 29 W Avg., and ηD = 30%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100
10
1
Input Signal
0.1
0.01
0.001
0.0001
WâCDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ "5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on
CCDF
0
2
4
6
8
10
PEAKâTOâAVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
â10
3.84 MHz
â20
Channel BW
â30
â40
â50
â60
â70
â80
â90
âACPR in 3.84 MHz
Integrated BW
â100
âACPR in 3.84 MHz
Integrated BW
â110
â9 â7.2 â5.4 â3.6 â1.8 0 1.8 3.6 5.4 7.2 9
f, FREQUENCY (MHz)
Figure 14. Single - Carrier W - CDMA Spectrum
MRF7S19100NR1 MRF7S19100NBR1
8
RF Device Data
Freescale Semiconductor
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