MRF7S19100NR1 Datasheet, PDF (6/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
19
33
18
G_ps
32
17
31
η_D
16
30
V_DD = 28 Vdc, P_out = 29 W (Avg.), I_DQ = 1000 mA
15
Single−Carrier W−CDMA, 3.84 MHz Channel
29
−10
IRL Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
14
−1.4
−15
13
−1.5
−20
12
PARC
11
−1.6
−25
−1.7
−30
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 29 Watts Avg.
19
40
18 _ηD
39
17
38
G_ps
16
V_DD = 28 Vdc, P_out = 47 W (Avg.), I_DQ = 1000 mA
37
Single−Carrier W−CDMA, 3.84 MHz Channel
15
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF) ³⁶
−10
IRL
14
−3
−15
13
−3.1
−20
12
−3.2
−25
PARC
11
−3.3
−30
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 47 Watts Avg.
20
I_DQ = 1500 mA
19
1250 mA
1000 mA
18
750 mA
17
16
500 mA
15
1
V_DD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
V_DD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
I_DQ = 500 mA
−40
1500 mA
1000 mA
−50
1250 mA
750 mA
−60
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S19100NR1 MRF7S19100NBR1
6
RF Device Data
Freescale Semiconductor