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| MRF7P20040HR3 Datasheet, PDF (9/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 W Avg.
f
MHz
Zsource
W
Zload
W
1995
6.80 - j13.11
14.67 + j4.09
2000
6.66 - j13.03
14.87+ j3.82
2005
6.52 - j12.93
15.08 + j3.58
2010
6.37 - j12.85
15.27 + j3.29
2015
6.22 - j12.78
15.45 + j3.00
2020
6.08 - j12.69
15.62 + j2.77
2025
5.94 - j12.60
15.80 + j2.44
2030
5.80 - j12.49
15.95 + j2.14
2035
5.65 - j12.40
16.08 + j1.82
Note: Measured with Peaking side open.
Zload = Test circuit impedance as measured from
drain to ground.
Zsource = Test circuit impedance as measured from
gate to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z source
Z load
Figure 11. Series Equivalent Source and Load Impedance â Carrier Side
VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 W Avg.
f
MHz
Zsource
W
Zload
W
1995
8.45 - j12.85
5.83 - j10.09
2000
8.28 - j12.79
5.57 - j10.11
2005
8.11 - j12.70
5.32 - j10.08
2010
7.95 - j12.63
5.06 - j10.07
2015
7.79 - j12.56
4.80 - j10.06
2020
7.63 - j12.48
4.55 - j10.01
2025
7.50 - j12.40
4.32 - j9.96
2030
7.34 - j12.32
4.06 - j9.88
2035
7.19 - j12.24
3.82 - j9.81
Note: Measured with Carrier side open.
Zload = Test circuit impedance as measured from
drain to ground.
Zsource = Test circuit impedance as measured from
gate to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z source
Z load
Figure 12. Series Equivalent Source and Load Impedance â Peaking Side
RF Device Data
Freescale Semiconductor
MRF7P20040HR3 MRF7P20040HSR3
9
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