MRF7P20040HR3 Datasheet, PDF (6/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
18.5
18 ^{VDD = 32 Vdc, Pout = 10 W (Avg.)}
I_DQA = 150 mA, V_GSB = 1.5 Vdc
17.5
46
G_ps
44
42
17
16.5
η_D
16 ACPR
15.5
40
Single−Carrier W−CDMA
38
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ ^−28
−14
−1.8
0.01% Probability on CCDF _−30
−16
−2
15
PARC
14.5
−32
−18
−2.2
−34
−20
−2.4
14
IRL
13.5
−36
−22
−2.6
−38
−24
−2.8
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 10 Watts Avg.
−10
V_DD = 32 Vdc, P_out = 15 W (PEP), I_DQA = 150 mA
V_GSB = 1.5 Vdc, Two−Tone Measurements
−20 _{(f1 + f2)/2 = Center Frequency of 2017.5 MHz}
IM3−L
−30
IM3−U
−40
IM5−U _IM5−L
−50
IM7−U _IM7−L
−60
1
10
100
TWO−TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Two - Tone Spacing
18.5
1
18
0
17.5
−1
G_ps
−2 dB = 7.64 W
48
−26
η_D
44
−28
ACPR
40
−30
17
−2 −1 dB = 5.48 W
36
−32
16.5
−3
−3 dB = 10.07 W
32
−34
V_DD = 32 Vdc, I_DQA = 150 mA
PARC
16
−4
V_GSB = 1.5 Vdc, f = 2017.5 MHz
28
−36
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
15.5
−5
24
−38
3
6
9
12
15
P_out, OUTPUT POWER (WATTS)
Figure 6. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
MRF7P20040HR3 MRF7P20040HSR3
6
RF Device Data
Freescale Semiconductor