MRF7P20040HR3 Datasheet, PDF (3/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Typical Performance ⁽¹⁾ (In Freescale Doherty Test Fixture, 50 ohm system) V_DD = 32 Vdc, I_DQA = 150 mA, V_GSB = 1.5 Vdc,
2010 - 2025 MHz Bandwidth
P_out @ 1 dB Compression Point, CW
P1dB
—
35
—
P_out @ 3 dB Compression Point, CW
P3dB
—
50
—
IMD Symmetry @ 15 W PEP, P_out where IMD Third Order
Intermodulation ` 30 dBc
IMD_sym
—
8
—
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW_res
—
70
—
Gain Flatness in 15 MHz Bandwidth @ P_out = 10 W Avg.
Gain Variation over Temperature
( - 30°C to +85°C)
G_F
—
0.04
—
ΔG
—
0.013
—
Output Power Variation over Temperature
( - 30°C to +85°C)
ΔP1dB
—
0.006
—
1. Measurement made with device in a Symmetrical Doherty configuration.
Unit
W
W
MHz
MHz
dB
dB/°C
dBm/°C
RF Device Data
Freescale Semiconductor
MRF7P20040HR3 MRF7P20040HSR3
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