MRF7P20040HR3 Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2010 to
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Doherty Single - Carrier W - CDMA Performance: V_DD = 32 Volts,
I_DQA = 150 mA, V_GSB = 1.5 Vdc, P_out = 10 Watts Avg., Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability
on CCDF.
Frequency
G_ps
(dB)
h_D
Output PAR ACPR
(%)
(dB)
(dBc)
2025 MHz
18.2
42.6
7.3
- 34.8
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 50 Watts CW
Output Power (3 dB Input Overdrive from Rated P_out)
• Typical P_out @ 3 dB Compression Point ] 50 Watts CW
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF7P20040H
Rev. 1, 8/2009
MRF7P20040HR3
MRF7P20040HSR3
2010 - 2025 MHz, 10 W AVG., 32 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465M - 01, STYLE 1
NI - 780 - 4
MRF7P20040HR3
CASE 465H - 02, STYLE 1
NI - 780S - 4
MRF7P20040HSR3
RF_inA/V_GSA 3
1 RF_outA/V_DSA
RF_inB/V_GSB 4
2 RF_outB/V_DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
V_DSS
- 0.5, +65
Vdc
Gate - Source Voltage
V_GS
- 6.0, +10
Vdc
Operating Voltage
V_DD
32, +0
Vdc
Storage Temperature Range
T_stg
- 65 to +150
°C
Case Operating Temperature
Operating Junction Temperature ^(1,2)
T_C
150
°C
T_J
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/
Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
MRF7P20040HR3 MRF7P20040HSR3
RF Device Data
Freescale Semiconductor
1